Enhanced thermal stability of Ti/TiO2/n-Ge contacts through plasma nitridation of TiO2 interfacial layer
Author:
Affiliation:
1. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, Maharashtra 400076, India
2. Applied Materials Inc., Santa Clara, California 94085, USA
Funder
Department of science and Technology, Govt. of India
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference37 articles.
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2. Enhanced Ge n+/p Junction Performance Using Cryogenic Phosphorus Implantation
3. Fermi-level pinning and charge neutrality level in germanium
4. Nanocrystal-based Ohmic contacts on n and p-type germanium
5. High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for $\hbox{n}^{+}/\hbox{p}$ Junction Diode
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2. Effects of Carbon Incorporation on Electrical Characteristics and Thermal Stability of Ti/TiO2/n-Ge MIS Contact;IEEE Access;2022
3. Tunable optical and electrical properties of thermal and plasma-enhanced atomic layer deposited Si-rich SixTi1−xO2 thin films;Journal of Applied Physics;2021-02-07
4. Wafer-scale mono-crystalline GeSn alloy on Ge by sputtering and solid phase epitaxy;Journal of Physics D: Applied Physics;2020-03-19
5. Impact of N2 Coimplant on Phosphorus Diffusion and Activation for n+/p Ge Junctions;IEEE Transactions on Electron Devices;2020-02
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