Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg-Reference-Cited by-同舟云学术

Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg

Published:2021-12-13 Issue:24 Volume:119 Page:242104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lu Shun¹^ORCID,Deki Manato²,Wang Jia³^ORCID,Ohnishi Kazuki¹^ORCID,Ando Yuto³^ORCID,Kumabe Takeru¹^ORCID,Watanabe Hirotaka³,Nitta Shugo³^ORCID,Honda Yoshio³,Amano Hiroshi²³⁴

Affiliation:

1. Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

2. Venture Business Laboratory, Nagoya University, Nagoya 464-8603, Japan

3. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan

4. Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

Funder

Creation of Innovative Core Technoligy for Power Electronics

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0076764

Reference33 articles.

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