Influence of an in-plane magnetic field on the electronic structure of an inverted InAs/GaSb quantum well-Reference-Cited by-同舟云学术

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Influence of an in-plane magnetic field on the electronic structure of an inverted InAs/GaSb quantum well

Published:2017-12-14 Issue:22 Volume:122 Page:225704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wu X. G.¹

Affiliation:

1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China and College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5006244

Reference67 articles.

1. Infrared Detectors for the Future

2. Cyclotron-resonance oscillations in InAs quantum wells

3. Cyclotron-resonance oscillations in a two-dimensional electron-hole system

4. Evidence of a Hybridization Gap in ``Semimetallic'' InAs/GaSb Systems

5. Far-infrared magneto-optical study of two-dimensional electrons and holes in InAs/AlxGa1−xSb quantum wells

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Coexistence of topological and normal insulating phases in electro-optically tuned InAs/GaSb bilayer quantum wells;Physical Review B;2024-03-27

2. Tunable transport properties of dual-gated InAs/GaSb core/shell nanowires;Journal of Applied Physics;2023-02-27

3. Scattering in InAs/GaSb coupled quantum wells as a probe of higher order subband hybridization;Physical Review B;2020-07-24

4. The effect of temperature on strong-coupling magnetopolaron in an asymmetrical Gaussian potential quantum well;International Journal of Modern Physics B;2020-05-10

5. Optical response of an inverted InAs/GaSb quantum well in an in-plane magnetic field*;Chinese Physics B;2019-09-01

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