Effects of a stress field on boron ion implantation damage in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354713
Reference11 articles.
1. Interaction of mechanical stress with residual defects in implanted Si
2. Impurity dependence of film‐edge‐induced dislocations in silicon
3. Dislocation Generation at Si3 N 4 Film Edges on Silicon Substrates and Viscoelastic Behavior of SiO2 Films
4. Generation Mechanism of Dislocations in Local Oxidation of Silicon
5. Evaluation of Dislocation Generation at Si3 N 4 Film Edges on Silicon Substrates by Selective Oxidation
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