Simulations of hybrid charge-sensing single-electron-transistors and CMOS circuits-Reference-Cited by-同舟云学术

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Simulations of hybrid charge-sensing single-electron-transistors and CMOS circuits

Published:2021-10-25 Issue:17 Volume:119 Page:174002
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tanamoto Tetsufumi¹^ORCID,Ono Keiji²^ORCID

Affiliation:

1. Department of Information and Electronic Engineering, Teikyo University, Toyosatodai, Utsunomiya 320-8551, Japan

2. Advanced Device Laboratory, RIKEN, Wako-shi, Saitama 351-0198, Japan

Funder

Advanced Science Institute

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0068555

Reference33 articles.

1. Single Charge Tunneling

2. Single-electron devices and their applications

3. Complementary digital logic based on the ‘‘Coulomb blockade’’

4. Single‐electron transistor logic

5. A silicon nanocrystals based memory

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1. Readout using resonant tunneling in silicon spin qubits;Journal of Applied Physics;2023-12-04

2. SPICE compact model of controlling electrons of spin qubits using FinFET;Japanese Journal of Applied Physics;2023-02-10

3. Five and three quantum dot systems as apparatuses for measuring energy levels;Physical Review B;2022-09-01

4. Emerging qubit systems: Guest editorial;Applied Physics Letters;2022-05-09

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