Transport simulation of bulk AlxGa1−xN and the two-dimensional electron gas at the AlxGa1−xN/GaN interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367452
Reference23 articles.
1. Metal semiconductor field effect transistor based on single crystal GaN
2. Effect of Aluminum Nitride Buffer Layer Temperature on Gallium Nitride Grown by OMVPE
3. Metal contacts to gallium nitride
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