Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2363233
Reference69 articles.
1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
2. Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)
3. Unusual properties of the fundamental band gap of InN
4. Optical bandgap energy of wurtzite InN
5. Surface charge accumulation of InN films grown by molecular-beam epitaxy
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