Asymmetric gating for reducing leakage current in carbon nanotube field-effect transistors-Reference-Cited by-同舟云学术

Asymmetric gating for reducing leakage current in carbon nanotube field-effect transistors

Published:2019-08-05 Issue:6 Volume:115 Page:063107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Srimani T.¹^ORCID,Hills G.¹,Zhao X.¹^ORCID,Antoniadis D.¹,del Alamo J. A.¹^ORCID,Shulaker M. M.¹

Affiliation:

1. EECS, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

Funder

National Science Foundation

Defense Advanced Research Projects Agency

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5098322

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