Low temperature characteristics in amorphous indium-gallium-zinc-oxide thin-film transistors down to 10 K
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4824875
Reference20 articles.
1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
2. Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors
3. Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
4. Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4
5. Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model
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