Conduction mechanisms at distinct resistive levels of Pt/TiO2-x/Pt memristors-Reference-Cited by-同舟云学术

Conduction mechanisms at distinct resistive levels of Pt/TiO2-x/Pt memristors

Published:2018-10 Issue:14 Volume:113 Page:143503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Michalas L.¹,Stathopoulos S.¹^ORCID,Khiat A.¹,Prodromakis T.¹

Affiliation:

1. Electronic Materials and Devices Research Group, Zepler Institute for Photonics and Nanoelectronics, University of Southampton, Southampton SO17 1BJ, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5040936

Reference35 articles.

1. High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application

2. Training and operation of an integrated neuromorphic network based on metal-oxide memristors

3. Unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses

4. Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell

5. Reconfigurable Memristive Device Technologies

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