Trion induced photoluminescence of a doped MoS2 monolayer
Author:
Affiliation:
1. ITMO University, St. Petersburg 197101, Russia
2. University of Regensburg, Regensburg 93040, Germany
3. Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, USA
Funder
Deutsche Forschungsgemeinschaft
Russian Science Foundation
Alexander von Humboldt-Stiftung
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0012971
Reference73 articles.
1. Atomically ThinMoS2: A New Direct-Gap Semiconductor
2. Emerging Photoluminescence in Monolayer MoS2
3. Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides
4. Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides
5. k · p theory for two-dimensional transition metal dichalcogenide semiconductors
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