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Stable, freestanding Ge nanocrystals

Published:2005-06-15 Issue:12 Volume:97 Page:124316
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sharp I. D.,Xu Q.,Liao C. Y.,Yi D. O.,Beeman J. W.,Liliental-Weber Z.,Yu K. M.,Zakharov D. N.,Ager J. W.,Chrzan D. C.,Haller E. E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1942629

Reference25 articles.

1. Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy

2. Formation of Ge nanocrystals embedded in aSiO2matrix: Transmission electron microscopy, x-ray absorption, and optical studies

3. Raman characterization of germanium nanocrystals in amorphous silicon oxide films synthesized by rapid thermal annealing

4. Formation of size controlled Ge nanocrystals in SiO 2 matrix by ion implantation and annealing

5. Group-IV nanocluster formation by ion-beam synthesis

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1. H2-mediated reduction of GeO2 and chemical vapor deposition of polycrystalline Ge porous films;Thin Solid Films;2023-10

2. Germanium‐based monoelemental and binary two‐dimensional materials: Theoretical and experimental investigations and promising applications;InfoMat;2022-09-22

3. Growth of embedded Ge nanoclusters inside spatially confined SiO2 matrix: An in-situ TEM study;Physica E: Low-dimensional Systems and Nanostructures;2019-10

4. Growth and characterization of cubic and non-cubic Ge nanocrystals;AIP Conference Proceedings;2016

5. Germanium;Reference Module in Materials Science and Materials Engineering;2016

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