Blue cadmium-free and air-fabricated quantum dot light-emitting diodes

Abstract

Quantum dot (QD) materials have found increasing use in display applications because of their high color purity and fluorescence quantum yield, enabling devices with higher brightness and efficiency. However, to access large-area printing and coating methods that are carried out in ambient conditions, it is necessary to, first, move away from toxic cadmium, and second, to target materials that can be air-processed. Herein, we synthesize zinc selenide-based blue QD material and air-fabricate light-emitting diodes (LEDs) and single-carrier devices. The encapsulated devices were also measured under ambient conditions. Multi-shell-structured ZnSeTe/ZnSe/ZnS (core/shell/shell) QDs show pure deep blue/purple fluorescence emission with a high photoluminescence quantum yield of 78%. The blue QD-LED devices are fabricated in a conventional structure with bottom light emission with two electron transport materials (ZnO and ZnMgO). The QD-LED devices with ZnO electron transport layer show a maximum luminance of ∼6200 cd m−2 at 9 V with a turn-on voltage of 3.5 V and current efficacy of 0.38 cd A−1, while with ZnMgO electron transport layer, the devices show a maximum luminance of 3000 cd m−2 at 7 V with a turn-on voltage of 3 V and current efficacy of 0.6 cd A−1. Electron-only and hole-only devices were fabricated to show and confirm the underlying charge transport mechanisms. To our knowledge, these results show for the first-time air-fabricated ZnSe-based QD-LEDs, paving the way for scaling up display applications and moving toward high-performance printed electronics.