High p-conductivity in AlGaN enabled by polarization field engineering

Author:

Rathkanthiwar Shashwat1ORCID,Reddy Pramod2ORCID,Moody Baxter2ORCID,Quiñones-García Cristyan1ORCID,Bagheri Pegah1ORCID,Khachariya Dolar2ORCID,Dalmau Rafael3ORCID,Mita Seiji2ORCID,Kirste Ronny2ORCID,Collazo Ramón1ORCID,Sitar Zlatko12ORCID

Affiliation:

1. Department of Materials Science and Engineering, North Carolina State University 1 , Raleigh, North Carolina 27695-7919, USA

2. Adroit Materials, Inc 2 ., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA

3. HexaTech, Inc. 3 , 991 Aviation Pkwy Ste 800, Morrisville, North Carolina 27560, USA

Abstract

High p-conductivity (0.7 Ω−1 cm−1) was achieved in high-Al content AlGaN via Mg doping and compositional grading. A clear transition between the valence band and impurity band conduction mechanisms was observed. The transition temperature depended strongly on the compositional gradient and to some degree on the Mg doping level. A model is proposed to explain the role of the polarization field in enhancing the conductivity in Mg-doped graded AlGaN films and the transition between the two conduction types. This study offers a viable path to technologically useful p-conductivity in AlGaN.

Funder

Air Force Office of Scientific Research

National Science Foundation

Army Research Office

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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