Oxygen and germanium migration at low temperature influenced by the thermodynamic nature of the materials used in germanium metal-insulator-semiconductor structures
Author:
Affiliation:
1. Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Funder
Japan Society for the Promotion of Science (JSPS)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4930227
Reference33 articles.
1. S. Migita , Y. Watanabe , H. Ota , H. Ito , Y. Kamimuta , T. Nabatame , and A. Toriumi , in IEEE VLSI Technical Digest (2008), p. 152.
2. Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100)
3. Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition
4. Stabilized formation of tetragonal ZrO2 thin film with high permittivity
5. Band structures and band offsets of high K dielectrics on Si
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