Gallium nitride nanowires by maskless hot phosphoric wet etching
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4819272
Reference14 articles.
1. Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Realization and optical characterization of etched mirror facets in GaN cavities
4. Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching
5. GaN nanotip pyramids formed by anisotropic etching
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1. Micro-Raman analysis of HVPE grown etched GaN epilayer with porous formation;Semiconductor Science and Technology;2023-05-25
2. Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid;Nanotechnology;2021-10-27
3. In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching;Nanomaterials;2021-01-07
4. Surface morphology of polar, semipolar and nonpolar freestanding GaN after chemical etching;Applied Surface Science;2020-05
5. Fabrication of high aspect ratio gallium nitride nanostructures by photochemical etching for enhanced photocurrent and photoluminescence property;Scripta Materialia;2018-03
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