The structure, the electrical properties and thermal stability of ZnO/SnO2 thin films-Reference-Cited by-同舟云学术

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The structure, the electrical properties and thermal stability of ZnO/SnO2 thin films

Published:2022 Issue: Volume: Page:
ISSN:0094-243X
Container-title:THE VIII INTERNATIONAL YOUNG RESEARCHERS’ CONFERENCE – PHYSICS, TECHNOLOGY, INNOVATIONS (PTI-2021)
language:
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Author:

Zhilova O. V.,Pankov S. Yu.,Makagonov V. A.,Kashirin M. A.,Remizova O. I.

Publisher

AIP Publishing

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0088881

Reference7 articles.

1. Stacked indium oxide/zinc oxide heterostructures as semiconductors in thin film transistor devices: a case study using atomic layer deposition

2. High Performance Amorphous Multilayered ZnO-SnO<sub>2</sub> Heterostructure Thin-Film Transistors: Fabrication and Characteristics

3. Solution-processed indium-free ZnO/SnO2 bilayer heterostructures as a low-temperature route to high-performance metal oxide thin-film transistors with excellent stabilities

4. Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

5. T. Kamiya, H.Hosono, NPG Asia Mater. 2, 15–22 (2010).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The enhancement of physical properties of the (Ni-Co) doped ZnO films assisted by UV irradiation;Applied Physics A;2024-08-12

2. Modulated transparent conductive zinc oxide films for efficient water splitting;Applied Physics A;2023-12-13

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