Saturation of intraband absorption and electron relaxation time in n-doped InAs/GaAs self-assembled quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122904
Reference18 articles.
1. Intrinsic mechanism for the poor luminescence properties of quantum-box systems
2. Rapid carrier relaxation in self-assembledInxGa1−xAs/GaAs quantum dots
3. Electron relaxation in a quantum dot: Significance of multiphonon processes
4. Electron relaxation in quantum dots by means of Auger processes
5. Breaking the phonon bottleneck in nanometer quantum dots: Role of Auger-like processes
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