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The curious case of thin-body Ge crystallization

Published:2011-09-26 Issue:13 Volume:99 Page:131910
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Duffy R.,Shayesteh M.,McCarthy B.,Blake A.,White M.,Scully J.,Yu R.,Kelleher A.-M.,Schmidt M.,Petkov N.,Pelaz L.,Marqués L. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3643160

Reference28 articles.

1. Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)

2. High FET Performance for a Future CMOS $\hbox{GeO}_{2}$ -Based Technology

3. Room-temperature light-emission from Ge quantum dots in photonic crystals

4. Crystallisation of Ge nanoclusters in SiO2 caused by electron irradiation in TEM

5. A single-electron transistor and an even-odd effect in chemically synthesized Ge nanowires

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1. 3D to 2D perspectives - Traditional and new doping and metrology challenges at the nanoscale;Materials Science in Semiconductor Processing;2023-08

2. Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring;Advanced Science;2020-09-24

3. Challenges in ultra-shallow junction technology;CMOS Past, Present and Future;2018

4. N-type Doping Strategies for InGaAs;Materials Science in Semiconductor Processing;2017-05

5. Hot Implantations of P into Ge: Impact on the Diffusion Profile;ECS Journal of Solid State Science and Technology;2017

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