Growth of epitaxial TiN films on MgO(100) by high current discharge plasma
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351915
Reference16 articles.
1. Tungsten/titanium nitride low‐resistance interconnections durable for high‐temperature processing
2. Effects of oxygen in TiNxon the diffusion of Cu in Cu/TiN/Al and Cu/TiNx/Si structures
3. Investigation of TiN films for diffusion barriers in high temperature metallization.
4. Dual‐ion‐beam sputter deposition of TiN films
5. Reactive evaporation of thin titanium nitride films in ultrahigh vacuum and their friction and wear behavior as a function of contact stress
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1. Chemical potential gradient induced formation of Kirkendall voids at the epitaxial TiN/MgO interface;Nanoscale;2023
2. Modern growth problems and growth techniques;SPRINGER TRAC MOD PH;2008
3. Electronic properties and bonding configuration at the TiN/MgO(001) interface;Physical Review B;2004-04-01
4. Epitaxial growth of TiN films by N-implantation into evaporated Ti films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-11
5. Epitaxial Growth of TiN(100) on Si(100) by Reactive Magnetron Sputtering at Low Temperature;Japanese Journal of Applied Physics;1998-06-15
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