Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3475521
Reference17 articles.
1. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates
2. Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells
3. Comparative study of GaN/AlGaN MQWs grown homoepitaxially on and (0001) GaN
4. In-plane polarization anisotropy of the spontaneous emission of M-plane GaN/(Al,Ga)N quantum wells
5. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
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1. Pulsed DC Sputtering of Highly c ‐Axis AlN Film on Top of Si (111) Substrate;physica status solidi (b);2021-04-14
2. Fabrication and Simulation of Piezoelectric Aluminium Nitride Based Micro Electro Mechanical System Acoustic Sensor;Journal of Nanoelectronics and Optoelectronics;2019-09-01
3. Defect-related anisotropic surface micro-structures of nonpolar a-plane GaN epitaxial films;CrystEngComm;2018
4. Crystal orientation variation of nonpolar AlN films with III/V ratio on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy;Electronic Materials Letters;2014-11
5. Characterization of a-plane GaN templates grown by HVPE and high efficiency deep UV emitting AlGaN/AlN MQWs grown by MBE on such templates;physica status solidi (c);2014-02
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