High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding ∼3000 S cm−1-Reference-Cited by-同舟云学术

High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding ∼3000 S cm−1

Author:

Wei Mian¹^ORCID,Sanchela Anup V.²^ORCID,Feng Bin³^ORCID,Ikuhara Yuichi³^ORCID,Cho Hai Jun¹²^ORCID,Ohta Hiromichi¹²^ORCID

Affiliation:

1. Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan

2. Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan

3. Institute of Engineering Innovation, The University of Tokyo, 2 − 11−16 Yayoi, Bunkyo, Tokyo 113-8656, Japan

Funder

Japan Society for the Promotion of Science

China Scholarship Council

Asahi Glass Foundation

Nippon Sheet Glass Foundation for Materials Science and Engineering

Mitsubishi Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference30 articles.

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