Surface smoothing and native oxide suppression on Zn doped aerotaxy GaAs nanowires-Reference-Cited by-同舟云学术

Surface smoothing and native oxide suppression on Zn doped aerotaxy GaAs nanowires

Published:2019-01-14 Issue:2 Volume:125 Page:025303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yngman Sofie¹^ORCID,McKibbin Sarah R.¹,Knutsson Johan V.¹,Troian Andrea¹^ORCID,Yang Fangfang¹,Magnusson Martin H.¹,Samuelson Lars¹,Timm Rainer¹^ORCID,Mikkelsen Anders¹

Affiliation:

1. Department of Physics & NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden

Funder

Knut och Alice Wallenbergs Stiftelse

Energimyndigheten

Stiftelsen för Strategisk Forskning

Vetenskapsrådet

Seventh Framework Programme

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5058727

Reference45 articles.

1. High‐frequency InGaAs tri‐gate MOSFETs with f max of 400 GHz

2. High-Performance Lateral Nanowire InGaAs MOSFETs With Improved On-Current

3. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

4. Monolithic GaAs/InGaP nanowire light emitting diodes on silicon

5. InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

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