Dislocation structure of GaN films grown on planar and nano-patterned sapphire
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3631823
Reference19 articles.
1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
2. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
3. Continuous-wave Operation of AlGaN-cladding-free Nonpolarm-Plane InGaN/GaN Laser Diodes
4. Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
5. High-Quality InGaN Films Grown on GaN Films
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1. High‐Brightness GaN‐Based Blue Light‐Emitting Diodes Using AlON Buffer Layer on 4 In.‐Patterned Sapphire Substrate: Low‐Dislocation‐Defect Epitaxy, Growth Mechanisms, and Higher Device Performance;physica status solidi (RRL) – Rapid Research Letters;2023-05-09
2. Correlation of crystalline and optical properties with UV photodetector characteristics of GaN grown by laser molecular beam epitaxy on a-sapphire;Applied Physics A;2022-10-20
3. Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology;Journal of Applied Physics;2020-01-07
4. Impact of Hydrothermally Grown ZnO Nanorods on External Quantum Efficiency of 32 × 32 Pixelated InGaN/GaN Micro-LED Array;IEEE Transactions on Nanotechnology;2019
5. Network of vertically c-oriented prismatic InN nanowalls grown on c-GaN/sapphire template by chemical vapor deposition technique;Journal of Crystal Growth;2018-05
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