Optical properties of InGaAs‐InP single quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96888
Reference19 articles.
1. Growth of Ga0.47In0.53As‐InP quantum wells by low pressure metalorganic chemical vapor deposition
2. Optical investigation of MQW system InP–InGaAs–InP
3. 1.3 μm InGaAsP/InP multiquantum-well lasers grown by vapour-phase epitaxy
4. Quantum well structures of In0.53Ga0.47As/InP grown by hydride vapor phase epitaxy in a multiple chamber reactor
5. Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm
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