Quantifying mobile ions and electronic defects in perovskite-based devices with temperature-dependent capacitance measurements: Frequency vs time domain-Reference-Cited by-同舟云学术

Quantifying mobile ions and electronic defects in perovskite-based devices with temperature-dependent capacitance measurements: Frequency vs time domain

Published:2020-01-31 Issue:4 Volume:152 Page:044202
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:J. Chem. Phys.

Author:

Futscher Moritz H.¹^ORCID,Gangishetty Mahesh K.²^ORCID,Congreve Daniel N.²^ORCID,Ehrler Bruno¹^ORCID

Affiliation:

1. AMOLF, Center for Nanophotonics, Science Park 104, 1098 XG Amsterdam, The Netherlands

2. Rowland Institute at Harvard, 100 Edwin H. Land Blvd., Cambridge, Massachusetts 02142, USA

Funder

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Rowland Institute at Harvard

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5132754

Reference54 articles.

1. Capacitance Transient Spectroscopy

2. J. Heath and P. Zabierowski, Advanced Characterization Techniques for Thin Film Solar Cells (Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany, 2016), pp. 93–119.

3. Impedance Spectroscopy for Emerging Photovoltaics

4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

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