On the interface properties of ZnO/Si electroluminescent diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3305530
Reference22 articles.
1. Recent advances in ZnO materials and devices
2. Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant
3. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
4. Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes
5. MgZnO∕AlGaN heterostructure light-emitting diodes
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