Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3463469
Reference15 articles.
1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
2. Unusual properties of the fundamental band gap of InN
3. Fermi-level stabilization energy in group III nitrides
4. The Blue Laser Diode
5. Design and characterization of GaN∕InGaN solar cells
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