Growth kinetics and properties of heteroepitaxial ZnTe films grown by metalorganic molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107539
Reference16 articles.
1. MBE growth of the (Zn,Cd)(Se,Te) system for wide-bandgap heterostructure lasers
2. Quantum well waveguide intensity modulator at visible wavelengths using CdZnTe/ZnTe quantum wells
3. Growth and characterization of CdMnTe and CdZnTe polycrystalline thin films for solar cells
4. HgZnTe for very long wavelength infrared applications
5. The nature of the predominant acceptors in high quality zinc telluride
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1. Investigation of structural and optical characteristics of low temperature nucleated thick ZnTe epitaxy on GaAs (211) substrates by MBE;Optical Materials;2024-10
2. Chemical beam epitaxy of Hg1 − xCdxTe and related binaries;Progress in Crystal Growth and Characterization of Materials;1994-01
3. Growth kinetics and properties of heteroepitaxial (Cd,Zn)Te films prepared by metalorganic molecular beam epitaxy;Journal of Electronic Materials;1993-08
4. Metalorganic molecular beam epitaxial growth of high‐quality Cd1−xZnxTe (0≤x≤0.27) films;Applied Physics Letters;1993-07-19
5. Divinylmercury as a Precursor in the Metalorganic Molecular Beam Epitaxy of Hg Containing II-VI Materials;MRS Proceedings;1992
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