Emergence of the giant out-of-plane Rashba effect and tunable nanoscale persistent spin helix in ferroelectric SnTe thin films-Reference-Cited by-同舟云学术

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Emergence of the giant out-of-plane Rashba effect and tunable nanoscale persistent spin helix in ferroelectric SnTe thin films

Published:2020-01-13 Issue:2 Volume:116 Page:022411
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Hosik¹^ORCID,Im Jino²,Jin Hosub³

Affiliation:

1. School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea

2. Center for Molecular Modeling and Simulation, Korea Research Institute of Chemical Technology, Daejeon 34114, South Korea

3. Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea

Funder

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5137753

Reference33 articles.

1. Spintronics: Fundamentals and applications

2. Coherent spin manipulation without magnetic fields in strained semiconductors

3. Gate Control of Spin-Orbit Interaction in an Inverted In0.53Ga0.47As/In0.52Al0.48As Heterostructure

4. Electronic analog of the electro‐optic modulator

5. Control of Spin Precession in a Spin-Injected Field Effect Transistor

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1. Strong Rashba effect induced by mechanical strain in the GeTe monolayer;Applied Physics Letters;2024-04-01

2. Persistent spin texture in ferroelectric Hf0.5Zr0.5O2;Applied Physics Letters;2024-03-18

3. MgTe (110) semiconductor for a magnetic-element-free nonballistic spin-field-effect transistor;Physical Review B;2024-02-15

4. Tuning Rashba–Dresselhaus effect with ferroelectric polarization at asymmetric heterostructural interface;Materials Horizons;2024

5. A Novel Ferroelectric Rashba Semiconductor;Advanced Materials;2023-12-24

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