Ultrafast dynamics of hole self-localization in β-Ga2O3
Author:
Affiliation:
1. Department of Applied Physics, KTH Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
2. Materials Department, University of California, Santa Barbara, California 93106, USA
Funder
Air Force Office of Scientific Research
Defense Threat Reduction Agency
Office of Naval Research
Energimyndigheten
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0003682
Reference31 articles.
1. A review of Ga2O3materials, processing, and devices
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3. Evidence for formation of self-trapped excitons in a β-Ga2 O3 single crystal
4. Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β−Ga2O3
5. Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al
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