Reversible transition between InGaAs dot structure and InGaAsP flat surface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119649
Reference14 articles.
1. Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase Epitaxy
2. Molecular-beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs
3. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
4. Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition
5. Nature of strained InAs three‐dimensional island formation and distribution on GaAs(100)
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1. Improved estimation of embedded InGaAs/GaAs quantum dots locations using a domed-apex nanoprobe;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-09
2. InAs quantum dot growth on planar InP (100) by metalorganic vapor-phase epitaxy with a thin GaAs interlayer;Journal of Crystal Growth;2011-01
3. Estimation of the location of embedded InGaAs/GaAs quantum dots by measuring strain-induced blueshift of photoluminescence;Physica E: Low-dimensional Systems and Nanostructures;2010-07
4. Localized strain effects on photoluminescence of quantum dots induced by nanoprobe indentation;Physica E: Low-dimensional Systems and Nanostructures;2008-04
5. InAs Quantum Dot Formation Studied at the Atomic Scale by Cross-sectional Scanning Tunnelling Microscopy;Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics;2008
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