Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs
Author:
Affiliation:
1. School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
2. Fujian Provincial Key Laboratory of Optoelectronic Technologies and Devices, Xiamen 361024, China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Fujian Province
Science and Technology Innovation Program for Graduate Student of Xiamen University of Technology
Scientific Research Project of Xiamen University of Technology
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0054062
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