Embedded Ge nanocrystals in SiO2 synthesized by ion implantation-Reference-Cited by-同舟云学术

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Embedded Ge nanocrystals in SiO2 synthesized by ion implantation

Published:2015-10-07 Issue:13 Volume:118 Page:134303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Baranwal V.¹,Gerlach J. W.²,Lotnyk A.²,Rauschenbach B.²^ORCID,Karl H.³,Ojha S.⁴,Avasthi D. K.⁴,Kanjilal D.⁴^ORCID,Pandey Avinash C.¹

Affiliation:

1. Nanotechnology Application Centre, University of Allahabad, Allahabad 211 002, India

2. Leibniz-Institut für Oberflächenmodifizierung, Permoserstraße 15, D-04318 Leipzig, Germany

3. Institut für Physik, Universität Augsburg, D-86135 Augsburg, Germany

4. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India

Funder

Department of Science and Technology, Ministry of Science and Technology (DST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4932151

Reference39 articles.

1. An electrically injected InAs/GaAs quantum-dot photonic crystal microcavity light-emitting diode

2. 1.3 μm room-temperature GaAs-based quantum-dot laser

3. Spectroscopy of Quantum Levels in Charge-Tunable InGaAs Quantum Dots

4. A Quantum Dot Single-Photon Turnstile Device

5. Electrically Driven Single-Photon Source

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1. Enhancing Short-Wave Infrared Photosensitivity of SiGe Nanocrystals-Based Films through Embedding Matrix-Induced Passivation, Stress, and Nanocrystallization;The Journal of Physical Chemistry C;2024-03-04

2. Ion Beam Synthesis of Germanium Nanocrystals—A Fluence Dependence Study;Springer Proceedings in Materials;2023

3. Ferromagnetism in defective yttria-stabilized zirconia;Current Applied Physics;2022-11

4. Ion irradiation-induced effects on optical and structural properties of Ge nanoparticles synthesized by laser ablation;Physica B: Condensed Matter;2022-06

5. Influence of oxygen co-implantation on germanium out-diffusion and nanoclustering in SiO2/Si films;Thin Solid Films;2022-03

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