A method to determine the Young's modulus of thin-film elements assisted by dark-field electron holography
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4790617
Reference31 articles.
1. Film‐edge‐induced stress in substrates
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4. Geometric effects on dislocation nucleation in strained electronics
5. Plastic Folding of Buckling Structures
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2. Impact of Some Processing Steps onto the Strain Distributions in FD-SOI CMOS Planar Devices: A Contribution of Dark-Field Electron Holography;ECS Journal of Solid State Science and Technology;2018
3. A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology;Solid-State Electronics;2016-03
4. Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope;Micron;2016-01
5. Combining 2 nm Spatial Resolution and 0.02% Precision for Deformation Mapping of Semiconductor Specimens in a Transmission Electron Microscope by Precession Electron Diffraction;Nano Letters;2015-07-30
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