Gate induced modulation of electronic states in monolayer organic field-effect transistor-Reference-Cited by-同舟云学术

Gate induced modulation of electronic states in monolayer organic field-effect transistor

Published:2021-11-29 Issue:22 Volume:119 Page:223301
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ishii Hiroyuki¹^ORCID,Kasuya Naotaka²,Kobayashi Nobuhiko¹^ORCID,Hirose Kenji³,Kumagai Shohei²^ORCID,Watanabe Shun²⁴⁵^ORCID,Takeya Jun²⁴⁶

Affiliation:

1. Department of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

2. Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kahiwanoha, Kashiwa, Chiba 277-8561, Japan

3. Smart Energy Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan

4. National Institute of Advanced Industrial Science and Technology (AIST)-University of Tokyo Advanced Operando-Measurement Technology Open Innovation Laboratory (OPERANDO-OIL), AIST, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan

5. PRESTO, JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

6. MANA, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Japan Science and Technology Agency

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0058666

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