Enhancement of group III atom interdiffusion by nondopant oxygen implants in In0.53Ga0.47As‐In0.52Al0.48As multiquantum wells

Author:

Rao E. V. K.,Ossart P.,Thibierge H.,Quillec M.,Krauz P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. 40GHz integrated multi quantum well intermixed waveguide photodiodes;16th International Workshop on Physics of Semiconductor Devices;2012-10-15

2. Integrated MQW intermixed InGaAsP/InP waveguide photodiodes;Optical and Quantum Electronics;2010-01

3. Oxygen implantation induced interdiffusion in AlGaAs/GaAs quantum well structures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-07

4. Mechanisms for implantation induced interdiffusion at In0.53Ga0.47As/In0.52Al0.48As heterointerfaces;Materials Science and Engineering: B;1997-02

5. Ion beam induced interdiffusion at the InGaAs/InAlAs interfaces;Ion Beam Modification of Materials;1996

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