Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature-Reference-Cited by-同舟云学术

Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature

Published:2016-05-09 Issue:19 Volume:108 Page:191107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lin Guangyang¹^ORCID,Wang Chen²,Li Cheng¹,Chen Chaowen¹,Huang Zhiwei¹,Huang Wei¹,Chen Songyan¹^ORCID,Lai Hongkai¹,Jin Chunyan³,Sun Jiaming³

Affiliation:

1. Department of Physics, OSED, Semiconductor Photonics Research Center, Xiamen University, Xiamen, Fujian 361005, People's Republic of China

2. School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, Xiamen, Fujian 361024, People's Republic of China

3. School of Materials Science and Engineering, Nankai University, Tianjin, Tianjin 300071, People's Republic of China

Funder

National Basic Research Program of China

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4949532

Reference26 articles.

1. High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain

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4. Toward a Germanium Laser for Integrated Silicon Photonics

5. Control of tensile strain in germanium waveguides through silicon nitride layers

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