Room-temperature epitaxial growth of AlN films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1509863
Reference19 articles.
1. GaN, AlN, and InN: A review
2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
3. Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer
4. III–nitrides: Growth, characterization, and properties
5. Strain variation with sample thickness in GaN grown by hydride vapor phase epitaxy
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