Reactive chemical beam etching of InP inside a chemical beam epitaxial growth chamber using phosphorus trichloride
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109486
Reference11 articles.
1. Progress in chemical beam epitaxy
2. Progress in chemical beam epitaxy
3. Selective area growth of heterostructure bipolar transistors by metalorganic molecular beam epitaxy
4. Etching of InP by HCl in an OMVPE reactor
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