Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations-Reference-Cited by-同舟云学术

Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations

Published:2017-04-17 Issue:16 Volume:110 Page:161112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chambonneau Maxime¹,Souiki-Figuigui Sarra²,Chiquet Philippe²,Della Marca Vincenzo²,Postel-Pellerin Jérémy²,Canet Pierre²,Portal Jean-Michel²,Grojo David¹

Affiliation:

1. Aix-Marseille University, CNRS, LP3, F-13288 Marseille, France

2. Aix-Marseille University, CNRS, IM2NP, F-13397 Marseille, France

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4982032

Reference18 articles.

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2. Non-linear absorption of focused femtosecond laser pulses at 1.3μm inside silicon: Independence on doping concentration

3. Long-wavelength multiphoton ionization inside band-gap solids

4. Delocalization of femtosecond laser radiation in crystalline Si in the mid-IR range

5. S. Skorobogatov , in IEEE International Workshop on Hardware-Oriented Security and Trust, 2009, HOST'09 (2009), pp. 1–6.

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