Formation and high‐temperature stability of CoSixfilms on an SiO2substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345142
Reference7 articles.
1. Electrical transport properties in Co‐silicides formed by thin‐film reactions
2. Insituresistivity measurement of cobalt silicide formation
3. Characterization of a Self‐Aligned Cobalt Silicide Process
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1. Co Thickness Effect on the Dielectric Permittivity of SiO$_{2}$/Co/SiO$_{2}$ Films;IEEE Transactions on Magnetics;2012-11
2. Highly chiral-selective growth of single-walled carbon nanotubes with a simple monometallic Co catalyst;Physical Review B;2012-06-06
3. Interaction of Co thin films with SiO2: Effect of Co loading;Materials Chemistry and Physics;2005-08
4. Optical absorption in Co-doped SiO2-GeO2 glass rods and fibers;Journal of Applied Physics;2003-01-15
5. Interlayer Mediated Epitaxy of Cobalt Silicide on Silicon (100) from Low Temperature Chemical Vapor Deposition of Cobalt Formation Mechanisms and Associated Properties;Journal of The Electrochemical Society;2001
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