Composition dependence of the work function of Ta1−xAlxNy metal gates-Reference-Cited by-同舟云学术

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Composition dependence of the work function of Ta1−xAlxNy metal gates

Published:2006-02-13 Issue:7 Volume:88 Page:072108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Alshareef H. N.,Choi K.,Wen H. C.,Luan H.,Harris H.,Senzaki Y.,Majhi P.,Lee B. H.,Jammy R.,Aguirre-Tostado S.,Gnade B. E.,Wallace R. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2174836

Reference5 articles.

1. Band offsets of wide-band-gap oxides and implications for future electronic devices

2. Metal-semiconductor interfaces

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