Elimination of microtwins in silicon grown on sapphire by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101285
Reference17 articles.
1. Rapid thermal processing to improve the epitaxy of (100) silicon on (11̄02) sapphire
2. Characteristics of the material improvement process for silicon on sapphire by solid phase epitaxial regrowth
3. Growth of thin silicon films on sapphire and spinel by molecular beam epitaxy
4. Surface treatment of (11̄02) sapphire and (100) silicon for molecular beam epitaxial growth
5. Substrate Annealing and the MBE Growth of Silicon on Sapphire.
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1. Study of the crystal structure of silicon nanoislands on sapphire;Semiconductors;2015-02
2. Epitaxial growth of hexagonal silicon polytypes on sapphire;Semiconductors;2015-01
3. Investigation of silicon-on-sapphire structures by means of TEM;Bulletin of the Russian Academy of Sciences: Physics;2012-09
4. Defect structure of Ge(111)/cubic Pr2O3(111)/Si(111) heterostructures: Thickness and annealing dependence;Journal of Applied Physics;2009-10
5. Spin-dependent photoconductivity in CVD- and MBE-grown silicon-on-sapphire;Semiconductor Science and Technology;1995-12-01
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