Energy-dispersive x-ray imaging of an InGaN/GaN bilayer on sapphire-Reference-Cited by-同舟云学术

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Energy-dispersive x-ray imaging of an InGaN/GaN bilayer on sapphire

Published:1998-11-30 Issue:22 Volume:73 Page:3273-3275
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

O’Donnell K. P.,Middleton P. G.,Trager-Cowan C.,Young C.,Bayliss S. C.,Fletcher I.,Van der Stricht W.,Moerman I.,Demeester P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.122742

Reference11 articles.

1. Luminescence of fluctuation tails of disordered solid solutions

2. Solid phase immiscibility in GaInN

3. The Morphology and Cathodoluminescence of GaN Thin Films

4. Optical linewidths of InGaN light emitting diodes and epilayers

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comment on “Direct evidence of nanocluster-induced luminescence in InGaN epifilms” [Appl. Phys. Lett. 86, 021911 (2005)];Applied Physics Letters;2005-09-26

2. Nitride-Based Light Emitting Diodes and Laser Diodes: Optical Properties and Applications;Optics of Semiconductors and Their Nanostructures;2004

3. Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots;Journal of Applied Physics;2003-07

4. Microcomposition and Luminescence of InGaN Emitters;physica status solidi (a);2002-07

5. Strain relaxation and compositional analysis of InGaN/GaN layers by Rutherford backscattering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-05

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