INDIRECT ELECTRON DRIFT VELOCITY VERSUS ELECTRIC FIELD MEASUREMENT IN GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653465
Reference5 articles.
1. Microwave measurement of the velocity-field characteristic of GaAs
2. A simple analysis of stable domain propagation in the Gunn effect
3. Some measurements of the steady-state and transient characteristics of high-field dipole domains in GaAs
4. MEASUREMENT OF THE VELOCITY‐FIELD CHARACTERISTIC OF GALLIUM ARSENIDE
5. Gunn Domain Dynamics
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1. Analytical model for I-V characteristics of JFETs with heavily doped channels;Solid-State Electronics;1990-01
2. Electron transport in InP at high electric fields;Applied Physics Letters;1983-04-15
3. Semiconducting and other major properties of gallium arsenide;Journal of Applied Physics;1982-10
4. High field temperature dependent electron drift velocities in GaAs;Applied Physics Letters;1982-03-15
5. Measurements of dipole domains in indium phosphide using a new point-contact probe;IEE Proceedings I Solid State and Electron Devices;1981
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