Significant enhancement of thermoelectric properties and metallization of Al-doped Mg2Si under pressure-Reference-Cited by-同舟云学术

Significant enhancement of thermoelectric properties and metallization of Al-doped Mg2Si under pressure

Published:2014-06-07 Issue:21 Volume:115 Page:213705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Morozova Natalia V.¹,Ovsyannikov Sergey V.²³,Korobeinikov Igor V.¹,Karkin Alexander E.¹,Takarabe Ken-ichi⁴,Mori Yoshihisa⁴,Nakamura Shigeyuki⁵,Shchennikov Vladimir V.¹

Affiliation:

1. Institute of Metal Physics of Russian Academy of Sciences, Urals Division, 18 S. Kovalevskaya St., Yekaterinburg 620041, Russia

2. Bayerisches Geoinstitut, Universität Bayreuth, Universitätsstrasse 30, D-95447 Bayreuth, Germany

3. Institute for Solid State Chemistry of Russian Academy of Sciences, Urals Division, 91 Pervomayskaya St., Yekaterinburg 620990, Russia

4. Okayama University of Science, Ridai-cho 1-1, Kita-ku, Okayama 700-0005, Japan

5. Tsuyama National College of Technology, 624-1 Numa, Tsuyama 708-8509, Japan

Funder

RFBR

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4881015

Reference93 articles.

1. Highly effectiveMg2Si1−xSnxthermoelectrics

2. Convergence of Conduction Bands as a Means of Enhancing Thermoelectric Performance ofn-TypeMg2Si1−xSnxSolid Solutions

3. The thermoelectric properties of bulk crystalline n- and p-type Mg2Si prepared by the vertical Bridgman method

4. Thermoelectric properties and power generation characteristics of sintered undoped n-type Mg2Si

5. Synthesis and Characterization of Al-Doped Mg2Si Thermoelectric Materials

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