Quantum-well and localized state emissions in AlInGaN deep ultraviolet light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2817947
Reference16 articles.
1. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
2. AlGaN-based 280nm light-emitting diodes with continuous wave powers in excess of 1.5mW
3. Significant stiffness reduction at ferroelectric domain boundary evaluated by ultrasonic atomic force microscopy
4. Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques
5. Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells
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1. Influence of growth temperature and miscut angle of m-plane sapphire substrate on the semi-polar (11–22) AlN film grown by HVPE;Frontiers in Physics;2022-11-23
2. Polarization Self-Screened Multiple Quantum Wells for Deep Ultraviolet Light-Emitting Diodes to Enhance the Optical Power;IEEE Photonics Journal;2021-10
3. The fabrication of AlN by hydride vapor phase epitaxy;Journal of Semiconductors;2019-12-01
4. Effects of growth temperature on characteristics of Mg-delta-doped p-AlInGaN epi-layers;Superlattices and Microstructures;2016-10
5. Suppression of the subband parasitic peak by 1nm i-AlN interlayer in AlGaN deep ultraviolet light-emitting diodes;Applied Physics Letters;2008-09-29
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