Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well-Reference-Cited by-同舟云学术

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Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well

Published:2008-08-04 Issue:5 Volume:93 Page:052102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pakarinen J.,Peng C. S.,Polojärvi V.,Tukiainen A.,Korpijärvi V.-M.,Puustinen J.,Pessa M.,Laukkanen P.,Likonen J.,Arola E.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2966146

Reference23 articles.

1. Computational study of GaAs1−xNxand GaN1−yAsyalloys and arsenic impurities in GaN

2. GaInNAs long-wavelength lasers: progress and challenges

3. High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm

4. Defects in Semiconductors: Some Fatal, Some Vital

5. Mutual Passivation of Electrically Active and Isovalent Impurities in Dilute Nitrides

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1. GaInP/GaAs tandem solar cells with highly Te- and Mg-doped GaAs tunnel junctions grown by MBE;Chinese Physics B;2015-09-29

2. GaAs tunnel junction grown using tellurium and magnesium as dopants by solid-state molecular beam epitaxy;Japanese Journal of Applied Physics;2014-01-08

3. Properties of the SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence;Applied Physics Letters;2011-09-05

4. Effects of post-growth annealing on InGaAs quantum posts embedded in Schottky diodes;Semiconductor Science and Technology;2011-03-23

5. Stacked GaAs quantum dots fabricated by refilling of self-organized nanoholes: optical properties and post-growth annealing;Nanotechnology;2011-02-02

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