Detection and spatial mapping of conductive filaments in metal/oxide/metal cross-point devices using a thin photoresist layer-Reference-Cited by-同舟云学术

Detection and spatial mapping of conductive filaments in metal/oxide/metal cross-point devices using a thin photoresist layer

Published:2019-02-11 Issue:6 Volume:114 Page:062901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nath Shimul Kanti¹,Nandi Sanjoy Kumar¹^ORCID,Li Shuai¹,Elliman Robert Glen¹^ORCID

Affiliation:

1. Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 2601, Australia

Funder

Australian Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5084060

Reference19 articles.

1. C. Dias , J. Ventura , and P. Aguiar ,Advances in Memristors, Memristive Devices and Systems( Springer, 2017), pp. 305–342.

2. Current-induced electrical self-oscillations across out-of-plane threshold switches based on VO2 layers integrated in crossbars geometry

3. High-endurance megahertz electrical self-oscillation in Ti/NbOx bilayer structures

4. Coupling dynamics of Nb/Nb2O5relaxation oscillators

5. S. K. Nandi , X. Liu , S. Li , D. K. Venkatachalam , K. Belay , and R. G. Elliman , inProceedings of 2014 Conference on Optoelectronic and Microelectronic Materials Devices (COMMAD), Perth, Australia, 14–17 December 2014( IEEE, 2014), pp. 290–293.

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Harnessing Metal/Oxide Interlayer to Engineer the Memristive Response and Oscillation Dynamics of Two‐Terminal Memristors;Advanced Functional Materials;2023-09-15

2. Tri-State Memristors Based on Composable Discrete Devices;International Journal of Bifurcation and Chaos;2023-06-15

3. Thermal transport in metal-NbO_x-metal cross-point devices and its effect on threshold switching characteristics;Nanoscale;2023

4. Resistive switching properties of Mn-doped amorphous Nb2O5 thin films for resistive RAM application;Materials Science in Semiconductor Processing;2022-12

5. High Spatial Resolution Thermal Mapping of Volatile Switching in NbO_x-Based Memristor Using In Situ Scanning Thermal Microscopy;ACS Applied Materials & Interfaces;2022-06-14